Document Type: Research Paper
Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a rough surface was observed at a thickness of nm. Also, the formation of AlN in amorphous films is identified by Fourier transform infrared (FTIR) spectroscopy. Atomic force microscopy (AFM) study confirms that the surface roughness and average grain size of films increased with film thickness.